Quasi In Situ XPS on a SiO_xF_y Layer Deposited on Silicon by a Cryogenic Process

A silicon oxyfluoride layer was deposited on a-Si samples using SiF 4 /O 2 plasma at different temperatures between −100°C and −40 °C. In situ X-ray photoelectron spectroscopy measurements were then performed to characterize the layer. The sample brought back room temperature analyzed again. It has been shown that a below −65 °C is needed significantly enhance physisorption of x species. Hence, in this condition, F-rich layer, stable low only, physisorbed. Above threshold temperature, native oxide fluorinated proportion O higher remains even when temperature.